College Of Education For Pure Science 
Arabic 
English The College of Education for Pure Sciences Discusses a Master's Thesis on the Effect of Doping and Point Defects on Boron Nitride Nanosheets
The College of Education for Pure Sciences discussed a Master's thesis entitled "The Effect of Doping and Point Defects on the Structural and Electronic Properties of Boron Nitride Nanosheets".
The study, presented by researcher Zainab Shaker Mahmoud, addressed two-dimensional hexagonal boron nitride (h-BN) nanosheets, which are characterized by a structure similar to graphene and high thermal and chemical stability, making them suitable for electronic and nanoscale applications as well as energy storage. The study aimed to determine the effect of doping them with nickel atoms and point defects on their structural and electronic properties, using Density Functional Theory (DFT) and the CASTEP program.
The results showed that nickel doping significantly changes the electronic properties, as the material transforms from an insulator with a wide energy gap to a semiconductor with a smaller gap. Point defects also lead to the disappearance of the energy gap and the transformation of the material into a conductor, with local distortions in the bonds. The study indicates the possibility of improving the properties of h-BN to suit various applications.
The discussion committee consisted of:
The study, presented by researcher Zainab Shaker Mahmoud, addressed two-dimensional hexagonal boron nitride (h-BN) nanosheets, which are characterized by a structure similar to graphene and high thermal and chemical stability, making them suitable for electronic and nanoscale applications as well as energy storage. The study aimed to determine the effect of doping them with nickel atoms and point defects on their structural and electronic properties, using Density Functional Theory (DFT) and the CASTEP program.
The results showed that nickel doping significantly changes the electronic properties, as the material transforms from an insulator with a wide energy gap to a semiconductor with a smaller gap. Point defects also lead to the disappearance of the energy gap and the transformation of the material into a conductor, with local distortions in the bonds. The study indicates the possibility of improving the properties of h-BN to suit various applications.
The discussion committee consisted of:
- ■ Prof. Dr. Sabah Mahmoud Amanallah (Chairman)
- ■ Prof. Dr. Samin Fadhil Mohammed Asaad (Member)
- ■ Asst. Prof. Dr. Hussein Ali Mohammed (Member)
- ■ Asst. Prof. Dr. Issa Zain Al-Abidin Hassan (Member and Supervisor)
